Crystal Research and Technology
Cryst. Res. Technol. 40, 400 (2005) - Abstract -

Investigation of semi-insulating InP co-doped with Ti and various acceptors for use in X-ray detection

K. Zdansky, L. Pekarek*, V. Gorodynskyy, and H. Kozak

Institute of Radio Engineering and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Praha 8, Czech Republic
*Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 18221 Praha 8, Czech Republic

Keywords indium phoshide, doping, titanium, manganese, detectors, Hall effect
PACS 71.20.Nr, 71.55.Eq, 72.20.My, 72.80.Ey
DOI 10.1002/crat.200410357

Semi-insulating InP single crystals co-doped with Zn and Ti and co-doped with Ti and Mn were grown by Czochralski technique. Wafers of these crystals were annealed for a long time at a high temperature and cooled slowly. The samples were characterized by temperature dependent resistivity and Hall coefficient measurements. The binding energies of Ti in semi-insulating InP co-doped with Ti and Zn and co-doped with Ti and Mn were found to differ which shows that Ti may occupy different sites in InP. The curves of Hall coefficient vs. reciprocal temperature deviate from straight lines at low temperatures due to electron and hole mixed conductance. The value of resistivity of the annealed semi-insulating InP co-doped with Ti and Mn reaches high resistivity at a reduced temperature easily achievable by thermo-electric devices which could make this material useable in X-ray detection.




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