Study on shaped single crystal growth and scintillating properties of Bi-doped rare-earth garnets by A. Novoselov, A. Yoshikawa, M. Nikl, N. Solovieva, and T. Fukuda

Crystal Research and Technology

Cryst. Res. Technol. 40, 419 (2005) - Abstract -

Study on shaped single crystal growth and scintillating properties of Bi-doped rare-earth garnets

A. Novoselov, A. Yoshikawa, M. Nikl*, N. Solovieva*, and T. Fukuda

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
*Institute of Physics AS CR, Cukrovarnicka 10, 162 53 Prague, Czech Republic

Keywords	garnet, shaped single crystal growth, luminescent properties, Bi³⁺
PACS	81.10.Fq
DOI	10.1002/crat.200410360

Shaped single crystals of Bi:Gd₃Ga₅O₁₂ (Bi = 0.102, 0.126 and 0.141 mol.%) and Bi:Y₃Ga₅O₁₂ (Bi = 0.041, 0.047 and 0.061 mol.%) were grown by the micro-pulling-down method. Measured optical absorption spectra show an absorption band round 290 nm ascribed to the lowest energy 6s²->6s6p transition of Bi³⁺. Difference in the position of the emission spectra of Bi-related bands in Gd₃Ga₅O₁₂ (470 nm) and Y₃Ga₅O₁₂ (314 nm) was explained by the lower local distortion of Bi polyhedron in Y₃Ga₅O₁₂ host leading to smaller Stokes shift of only 0.36 eV. Unsuitability of Bi-doping in the Gd₃Ga₅O₁₂ host to get energy transfer from Gd³⁺ towards Bi³⁺ centers was concluded, while Bi-doped Y₃Ga₅O₁₂ could compete against Bi₄Ge₃O₁₂ scintillator.

The full text of this paper in pdf-Format:

If you have come directly to this page, click this symbol

to go to the CRT homepage.