Lattice parameter measurements of boron doped Si single crystals by J. Kucytowski and K. Wokulska

Crystal Research and Technology

Cryst. Res. Technol. 40, 424 (2005) - Abstract -

Lattice parameter measurements of boron doped Si single crystals

J. Kucytowski and K. Wokulska

Institute of Materials Science, University of Silesia, ul. Bankowa 12, 40-007 Katowice, Poland

Keywords	silicon single crystals, lattice parameter, boron, oxygen
PACS	82.80.EJ, 81.05.Cy, 83.85.Hf
DOI	10.1002/crat.200410361

The influence of boron dopants and oxygen impurity on lattice parameters of Si single crystals is studied. Concentrations of boron and oxygen were determined by the Bond method. A linear contraction of the crystal lattice was observed due to high boron doping of Si single crystals. Lattice parameters of Si single crystals increased below the lower limit boron concentration NB = 2.1x10¹⁶ cm^-3. This proves the presence oxygen at low boron concentrations. In highly boron-doped Si single crystals no oxygen influence on lattice parameter change was observed.

The full text of this paper in pdf-Format:

If you have come directly to this page, click this symbol

to go to the CRT homepage.