Crystal Research and Technology
Cryst. Res. Technol. 40, 471 (2005) - Abstract -

Optical studies of defects generated in neutron-irradiated Cz-Si during HP-HT treatment

B. Surma, A. Misiuk*, A. Wnuk, C. A. Londos**, and A. Bukowski

Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
*Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
**Department of Physics, Panepistimiopolis, GR-15784 Zografos, Athens, Greece

Keywords silicon, irradiation, absorption, photoluminescence, hydrostatic pressure
PACS 81.10.-h
DOI 10.1002/crat.200410369

Neutron-irradiated Czochralski grown silicon subjected to heat treatment (HT) at 350°C and 1000°C under enhanced hydrostatic pressure (HP) was studied in this work. It has been shown that external hydrostatic pressure enhances the creation of VO2 defects in neutron irradiated silicon subjected to the HP - HT treatment at 350°C. Enhanced formation of platelet-like oxygen precipitates was found in the samples treated at 1000°C under 1.1GPa. This effect was more pronounced in the samples with VO2 defects. Presented results seem to suggest that probably HP helps to transform VO2 to some kind of defects or change alone VO2 defects in the form that can act as an additional nucleus for an additional oxygen precipitation at 1000°C. No correlation between the plate-like oxygen precipitates related absorption at 1225 cm-1 and dislocation-related emission has been confirmed.




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