Optical properties of InP layers prepared with the addition of Ce, Tm and Lu in the growth melt by J. Zavadil, O. Prochazkova, and P. S. Gladkov

Crystal Research and Technology

Cryst. Res. Technol. 40, 498 (2005) - Abstract -

Optical properties of InP layers prepared with the addition of Ce, Tm and Lu in the growth melt

J. Zavadil, O. Prochazkova, and P. S. Gladkov

Institute of Radio Engineering and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 182 51 Praha 8-Kobylisy, Czech Republic

Keywords	liquid phase epitaxy, indium phosphide, rare-earth elements, photoluminescence, radiation detectors
PACS	72.80.Ey, 78.55.Cr, 81.15.Lm
DOI	10.1002/crat.200410374

InP single crystals were grown by liquid phase epitaxy on semi-insulating InP:Fe and n-type InP:Sn substrates with cerium, thulium and lutetium additions to the growth melt. Grown layers were examined by low-temperature photoluminescence spectroscopy and C-V measurements. Layers prepared with the addition of Ce and Tm exhibit the change of electrical conductivity from n to p, while those grown with Lu admixture remain n-type. Ce has been found to be incorporated into the InP lattice and sharp luminescence arising from ²F_7/2 -> ²F_5/2 inner shell transitions of Ce³⁺ at 3600 nm was detected. The highest purifying effect due to RE addition has been found for Tm admixture, where the impurity concentration was decreased by three orders of magnitude and fine spectral features were revealed by photoluminescence spectroscopy. The addition of Tm into the growth melt enables to prepare thick and pure InP layers of p-type conductivity – a material promising in the context of semiconductor radiation detectors.

The full text of this paper in pdf-Format:

If you have come directly to this page, click this symbol

to go to the CRT homepage.