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Crystal Research and Technology |
Cryst. Res. Technol. 40,
557 (2005) - Abstract -
Preparation and characterization of electrodeposited indium selenide thin films
S. Gopal, C. Viswanathan, B. Karunagaran*, Sa. K. Narayandass, D. Mangalaraj*, and Junsin Yi*
Thin Film Laboratory, Department of Physics, Bharathiar University, Coimbatore – 641 046, India
*School of Information and Communication Engineering, Sungkyunkwan University, Suwon – 440 746, South Korea
Indium Selenide (InSe) thin films were deposited from a mixture of Indium chloride and selenium dioxide in aqueous solution by electrodeposition technique on Indium Tin oxide coated glass substrates. The effects of the parameters during deposition such as current density, deposition potential versus saturated calomel electrode, pH value and concentration of source material were studied. X-ray diffraction studies were carried out on the films to analyze the microstructure using an x-ray diffractometer and were examined by RAMAN spectroscopy. The Raman peak position did not change much with chemical concentrations. Raman scattering due to the (LO) phonon was observed at 211 cm-1. Optical absorption studies were performed with a double beam ultra violet-visible –NIR spectrophotometer in the wavelength 300 – 1100 nm. The surface morphology of the layer was examined using a scanning electron micrograph. The composition of the films was studied using an Energy Dispersive Analysis by X-Rays (EDAX).
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