Crystal Research and Technology
Cryst. Res. Technol. 40, 573 (2005) - Abstract -

Influence of substrate temperature on the properties of vacuum evaporated InSb films

V. Senthilkumar, S. Venkatachalam, C. Viswanathan, S. Gopal, Sa. K. Narayandass, D. Mangalaraj, K. C. Wilson*, and K. P. Vijayakumar*

Thin Film Laboratory, Department of Physics, Bharathiar University, Coimbatore – 641 046, India
*Department of Physics, Cochin University of Science and Technology, Cochin – 682 022, India

Keywords InSb, thin films, Raman scattering, mobility, FTIR, Hall effect
PACS 68.60.Bs, 72.20.My
DOI 10.1002/crat.200410385

Indium Antimonide (InSb) thin films were grown onto well cleaned glass substrates at different substrate temperatures (303, 373 and 473 K) by vacuum evaporation. The elemental composition of the deposited InSb film was found to be 52.9 % (In) and 47.1 % (Sb). X-ray diffraction studies confirm the polycrystallinity of the films and the films show preferential orientation along the (111) plane. The particle size (D), dislocation density and strain were evaluated. The particle size increases with the increase of substrate temperature, which was found to be in the range from 22.36 to 32.59 nm. In Laser Raman study, the presence of longitudinal mode (LO) confirms that the deposited films were having the crystalline nature. Raman peak located at 191.26 cm-1 shift towards the lower frequencies and narrows with increase in deposition temperature. This indicates that the crystallinity is improved in the films deposited at higher substrate temperatures. Hall measurements indicate that the films were p-type, having carrier concentration ~ 1016 cm-3 and mobility (4 – 7.7) x 103 cm2/Vs. It is observed that the carrier concentration (N) decreases and the Hall mobility (μ) increases with the increase of substrate temperature.




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