Double-frequency properties of In:LiNbO3 crystals by Rui Wang, Biao Wang, Yulan Liu, and Liangsheng Shi

Crystal Research and Technology

Cryst. Res. Technol. 40, 684 (2005) - Abstract -

Double-frequency properties of In:LiNbO₃ crystals

Rui Wang, Biao Wang*, Yulan Liu*, and Liangsheng Shi**

Department of Applied Chemistry and Electro-Optics Technology Center, Harbin Institute of Technology, Harbin 150001, P.R. China
*The State Key Lab of Optoelectronic Materials and Technologies, School of Physics and Technology, Sun Yat-sen University, Guangzhou 510275, China
**Harbin University of Science and Technology, Harbin, China

Keywords	second harmonic generation, dark trace, In:LiNbO₃ crystals
PACS	81.10.Dn, 42.65.Ky, 42.70.Mp
DOI	10.1002/crat.200410408

1 mol%, 2 mol%, 3 mol%, 4 mol% and 5 mol% In³⁺ doped LiNbO₃ crystals were grown by the Czochralski method, respectively. Oxidized treatment of some crystals was carried out. The infrared transmission spectra and photo-damage resistance of the samples were measured. The results showed that the OH^- absorption peaks of In(3mol%):LiNbO₃, In(4mol%):LiNbO₃ and In(5mol%):LiNbO₃ crystals were located at about 3508 cm^-1, while those of In(1mol%):LiNbO₃ and In(2mol%):LiNbO₃ crystals were located at about 3484cm^-1. When the doped In³⁺ concentration reached its threshold in LiNbO₃ crystal, photo-damage resistance of In:LiNbO₃ crystals was two orders of magnitude higher than that of pure LiNbO₃ crystal. The experimental results of the second harmonic generation (SHG) showed that the phase matching temperatures of In:LiNbO₃ crystals were lower than those of Zn:LiNbO₃ and Mg:LiNbO₃ crystals and the SHG efficiency reached 38%. Oxidization treatment was also found to make the dark trace resistance of crystals increase.

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