Microhardness studies of GaTe whiskers by A. G. Kunjomana and K. A. Chandrasekharan

Crystal Research and Technology

Cryst. Res. Technol. 40, 782 (2005) - Abstract -

Microhardness studies of GaTe whiskers

A. G. Kunjomana and K. A. Chandrasekharan

P. G. Department of Physics, Christ College, Bangalore - 560 029, Karnataka, India

Keywords	GaTe, physical vapour deposition (PVD), whiskers, Vickers microhardness, crack propagation
PACS	68.70.+w
DOI	10.1002/crat.200410431

Single crystal whiskers of gallium telluride (GaTe) have been grown by the physical vapour deposition (PVD) method. Microindentation studies were carried out on the prism faces of the needles to understand their mechanical behaviour. The variation in the microhardnessof GaTe crystals with applied load has been determined at room temperature using Vickers microhardness indenter. The work- hardening exponent has also been computed for different load regions.

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