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Crystal Research and Technology |
Cryst. Res. Technol. 40,
827 (2005) - Abstract -
Growth behaviour of bulk GaN single crystals grown with various flux ratios using solvent-thermal method
T. I. Shin and D. H. Yoon
Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon 440-746, Korea
| Keywords | GaN crystals, crystal growth behavior, solvent-thermal method, charaterization |
| PACS | 81.05.Ea, 81.10.Dn |
| DOI | 10.1002/crat.200410441 |
Bulk GaN single crystals were grown using a solvent-thermal method. They were grown for 200 h at 600°C and 800°C using 8 MPa of N2 gas and 1-3 mm sized pyramid GaN single crystals. Pure Na, NaN3 and Ca were used as the flux. The mole fraction of the [flux]/([flux] + [Ga]) was 0.30-0.67. The growth behavior differed according to the flux ratio. The quality of the bulk GaN single crystals was improved by increasing the flux ratio. The bulk GaN single crystals formed by spontaneous nucleation were deposited on the BN crucible wall and bottom during the first step of synthesis. The wurtzite structure of the GaN grown single crystal was confirmed by x-ray diffration. The chemical composition was analyzed by electron probe microanalysis. The quality and optical properties of the GaN single crystal were examined by Raman spectroscopy and photoluminesence analysis.
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