Crystal Research and Technology
Cryst. Res. Technol. 40, 901 (2005) - Abstract -

Dielectric properties of thallium gallium diselenide layered crystal in the incommensurate phase

E. Sentürk, L. Tümbek*, and F. A. Mikailov*

Department of Physics, Sakarya University, 54100, Sakarya, Turkey
*Department of Physics, Gebze Institute of Technology, Gebze, 41400, Kocaeli, Turkey

Keywords annealing, phase transitions, ferroelectrics, memory effect, pinning effect
PACS 77.22.Ch, 77.80.Ae
DOI 10.1002/crat.200410455

The dielectric measurements of the layered crystal were studied in temperature range of successive phase transitions. The measurements revealed that the phase transition occurred in 242 K is an incommensurate phase transition. When the sample is annealed at a stabilized temperature in the incommensurate phase, a remarkable memory effect has been observed on cooling run. The mechanism of the memory effect in the incommensurate phase of the semiconducting ferroelectric TlGaSe2 can be interpreted in the frame of the theory of defect density waves. This theory claims that the memory effect is the result of pinning of the incommensurate structure by the lattice inhomogeneities. With decreasing the annealing temperature the phase transition temperature shifts to lower temperatures gradually. Moreover, the peak intensities also increase gradually. In addition to these effects, the phase transition temperature shifts to lower temperatures with increasing annealing time.




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