Multiscale simulation of silicon film growth by C. Cavallotti, E. Pantano, A. Veneroni, and M. Masi

Crystal Research and Technology

Cryst. Res. Technol. 40, 958 (2005) - Abstract -

Multiscale simulation of silicon film growth

C. Cavallotti, E. Pantano, A. Veneroni, and M. Masi

Dipartimento di. Chimica, Materiali e Ingegneria Chimica “Giulio Natta”, Politecnico di Milano, via Mancinelli 7 20131 Milano, Italy

Keywords	modeling, growth, silicon, chemical vapour deposition
PACS	81.05.Cy, 81.15.Al, 81.15.Gh
DOI	10.1002/crat.200410467

The modeling approach (multiscale) linking the different scales encountered in simulating industrial growth processes from the vapor phase of interest for the silicon based microelectronics is here addressed. The final aim is linking the materials and devices performances to the operational parameters of the production techniques.

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