Crystal Research and Technology
Cryst. Res. Technol. 40, 964 (2005) - Abstract -

Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications

C. F. Pirri, S. Porro, S. Ferrero, E. Celasco, S. Guastella, L. Scaltrito, R. Yakimova*, M. Syväjärvi*, R. R. Ciechonski*, S. De Angelis, and D. Crippa**

INFM - Physics Department, Politecnico di Torino, C.so Duca degli Abruzzi 24, Torino, Italy , Materials and Microsystems Laboratory - Lab, Palazzo "L. EINAUDI", Lungo Piazza d'Armi 6, Chivasso (Torino), Italy
*Physics and Measurement Technology, Linköping University, SE-58183 Linköping, Sweden
**LPE S.p.A Via Falzarego, 8 I-20021 Bollate (Milano), Italy

Keywords SiC, growth, epitaxial layer, defects, optical characterization, structural characterization
PACS 61.72-p, 78.30-j, 78.40.Fy, 71.20.Nr
DOI 10.1002/crat.200410468

Silicon carbide (SiC) is a wide band gap semiconductor, interesting for its physical properties such as high breakdown field, high saturated drift velocity and high thermal conductivity, which has been intensively studied in the last years. Although the high potentiality of this material, the SiC technology shows at the moment some limitations, indeed, the reliability of SiC-based devices is strictly correlated to the defects present in the crystalline structure. 4H-SiC epilayers were grown by Hot Wall Chemical Vapor Deposition (at 1600°C) and by Sublimation techniques (at 2000°C). A surface investigation of the epilayers has been performed finding particular physical finger-prints correlated with several kind of defects aimed at giving an important feedback to the epitaxial growth processes.




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