Silicon carbide growth mechanisms from SiH4, SiHCl3 and nC3H8 by A. Veneroni, F. Omarini, and M. Masi

Crystal Research and Technology

Cryst. Res. Technol. 40, 967 (2005) - Abstract -

Silicon carbide growth mechanisms from SiH₄, SiHCl₃ and nC₃H₈

A. Veneroni, F. Omarini, and M. Masi

Dipartimento di. Chimica Materiali e Ingegneria Chimica “Giulio Natta”, Politecnico di Milano. Via Mancinelli 7, 20131 Milano, Italy

Keywords	silicon carbide, crystal growth, epitaxial deposition, modelling
PACS	81.15.gh, 82.33.Ya, 82.20.wt
DOI	10.1002/crat.200410469

A detailed chemical mechanism for the silicon carbide epitaxial growth using chlorinated precursors is presented here. The mechanism involves 155 gas phase and 66 surface reactions among 47 gas phase and 9 surface species, respectively. A comparison with the performances of the standard process using silane is presented and the observed growth rate increase and the disappearing of the homogeneous silicon droplets in gas phase is explained.

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