Horizontal hot wall reactor design for epi-SiC growth by A. Veneroni, F. Omarini, M. Masi, S. Leone, M. Mauceri, G. Pistone, and G. Abbondanza

Crystal Research and Technology

Cryst. Res. Technol. 40, 972 (2005) - Abstract -

Horizontal hot wall reactor design for epi-SiC growth

A. Veneroni, F. Omarini, M. Masi, S. Leone*, M. Mauceri*, G. Pistone*, and G. Abbondanza*

Dipartimento di. Chimica Materiali e Ingegneria Chimica “Giulio Natta”, Politecnico di Milano via Mancinelli 7, 20131 Milano, Italy
*Epitaxial Technology Center, Contrada Torre Allegra, 95121 Catania, Italy

Keywords	SiC growth, hot wall reactor, chemical vapour deposition
PACS	81.15.Gh, 82.33.Ya, 83.85.Pt
DOI	10.1002/crat.200410470

The model adopted for the simulation of a new industrial size type of horizontal cold wall reactor for epitaxial silicon carbide deposition is reviewed. The attention is focalized on the chemical mechanism adopted and on the comparison with some growth rate data and temperature profiles for the system ethylene, silane, hydrogen and the deposition of undoped silicon carbide.

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