Crystal Research and Technology
Cryst. Res. Technol. 40, 987 (2005) - Abstract -

Designing a large scale CVD reactor for GaAs growth on Ge substrates by multi-hierachy modeling

D. Moscatelli, A. Veneroni, C. Cavallotti, M. Masi, M. Bosi*, G. Attolini*, and C. Pelosi*

Dipartimento di Chimica, Materiali & Ingegneria Chimica "Giulio Natta", Politecnico di Milano, via Mancinelli 7, 20131 Milano, Italy
*Istituto IMEM-CNR, Parco area delle Scienze 37/A, 43010 Fontanini, Parma, Italy

Keywords MOCVD, GaAs/Ge, modelling, solar cells
PACS 81.05.Dz, 81.15.Gh, 82.33.Ya, 83.85.Pt, 84.60.Jt
DOI 10.1002/crat.200410473

A novel large scale MOCVD reactor was designed through the use of models of different complexity and addressing the growth process at different length scales (multi-hierarchy and multi-scale approach). Particular care was taken in designing the gas distribution over the whole susceptor up to exhaust to avoid fluid rolls and back circulations. Moreover, a quantum chemistry based refining of GaAs deposition chemistry was performed and the usual macroscale (fluid dynamics and growth rate) simulations were used for reactor design. The reactor was then constructed, installed and placed on operation to test its real performances.




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