Development of InN metalorganic vapor phase epitaxy using in-situ spectroscopic ellipsometry by M. Drago, C. Werner, M. Pristovsek, U. W. Pohl, and W. Richter

Crystal Research and Technology

Cryst. Res. Technol. 40, 993 (2005) - Abstract -

Development of InN metalorganic vapor phase epitaxy using in-situ spectroscopic ellipsometry

M. Drago, C. Werner, M. Pristovsek, U. W. Pohl, and W. Richter

Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, 10623 Berlin, Germany

Keywords	InN, VPE
PACS	81.10.-h
DOI	10.1002/crat.200410474

Metalorganic vapor phase epitaxy of InN layers on sapphire was studied in-situ by spectroscopic ellipsometry (SE), ex-situ atomic force microscopy and optical microscopy. Surface morphology has been largely improved by using nitrogen instead of hydrogen as carrier gas during sapphire nitridation. Using the sensitivity of in-situ SE with respect to roughness we established a new growth procedure with low V/III ratio (10⁴) at high temperature (580°C) and growth rates as high as 350 nm/h, leading to improved electronic layer properties and allowing for growth of comparably thick layers.

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