Growth aspects of AlGaAs/GaAs tunnel diodes for multijunction solar cells by G. Timò, C. Flores, and R. Campesato

Crystal Research and Technology

Cryst. Res. Technol. 40, 1039 (2005) - Abstract -

Growth aspects of AlGaAs/GaAs tunnel diodes for multijunction solar cells

G. Timò, C. Flores, and R. Campesato

CESI S.p.A. Via Rubattino No. 54, 20134 Milano, Italy

Keywords	MOVPE, growth, solar cells, multijunction, AlGaAs:C, GaAs, Ge, tunnel diodes, heterojunction, XRD, RT-PL
PACS	81.10.-h
DOI	10.1002/crat.200410482

Growth aspects related to AlGaAs/GaAs tunnel diodes for multijunction solar cell structures are presented. Test structures have been grown in order to show the correct way for checking the thermal resistance of tunnel diodes. AlGaAs:C lattice contraction as a function of carbon concentration and growth temperature has been studied by using XRD, Hall and Room temperature photoluminescence characterisation. The XRD experimental results have been successfully compared with the lattice contraction model reported by W. E. Hoke et al..

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