Bottom cell growth aspects for triple junction InGaP/(In)GaAs/Ge solar cells by G. Timò, C. Flores, and R. Campesato

Crystal Research and Technology

Cryst. Res. Technol. 40, 1043 (2005) - Abstract -

Bottom cell growth aspects for triple junction InGaP/(In)GaAs/Ge solar cells

G. Timò, C. Flores, and R. Campesato

CESI S.p.A. Via Rubattino No. 54, 20134 Milano, Italy

Keywords	MOVPE, growth, solar cells, multijunction, GaAs/Ge, AlGaAs/Ge, InGaP/Ge, Ge bottom cell
PACS	81.10.-h
DOI	10.1002/crat.200410483

The paper discusses the problems of nucleation layer and substrate specification selection for a bottom Ge cell performance. GaAs/Ge, AlGaAs/Ge and InGaP/Ge heterojuctions have been compared showing how lattice matching and dopant interdiffusion control are key aspects for improving the Ge bottom cell photovoltaic response. The influence of substrates orientation, polarity and resistivity on the electrical performances of the bottom cells are presented.

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