Impact of antimony doping on microdefect formation in Czochralski grown silicon crystals by M. Porrini

Crystal Research and Technology

Cryst. Res. Technol. 40, 1054 (2005) - Abstract -

Impact of antimony doping on microdefect formation in Czochralski grown silicon crystals

M. Porrini

MEMC Electronic Materials, via Nazionale 59, 39012 Merano, Italy

Keywords	Czochralski silicon, microdefects, antimony doping
PACS	81.05.Zh, 81.10.Pq, 61.72.Hq
DOI	10.1002/crat.200410485

The impact of antimony doping on the formation of vacancy- and interstitial-type microdefects in Czochralski silicon is studied by growing test crystals with different Sb doping levels, in the range from 0 (undoped) to 3x10¹⁸ cm^-3, and with different pulling rates. Antimony is found to cause a shift from interstitial- to vacancy-type microdefects, observable already at a concentration of ~10¹⁷ cm^-3. The shift coefficient K for antimony is estimated to be 7.2x10^-19 cm³.

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