Application of InGaAs/InGaP double-heterostructure (DH) lasers increases the band offset between the cladding layer and the active layer more than the use of conventional 1.3μm InGaAsP/InP lasers. As a first step in realizing 1.3μm InGaP/InGaAs/InGaP DH lasers, we proposed InGaP lattice-mismatched epitaxial lateral overgrowth (ELO) technique and successfully carried out the InGaP growth on both GaAs (100), (111)B and InP (100) substrates by liquid phase epitaxy. In this work, we grew the InGaP crystal on GaAs (111)B substrate by adjusting Ga and P composition in In solution, to obtain In_0.79Ga_0.21P (λ= 820nm) virtual substrate for 1.3μm InGaAs/InGaP DH lasers. To grow the InGaP all over the lateral surface of the substrate, the growth time was extended to 6 hours. The amount of InGaP lateral growth up to 2 hours was gradually increased, but the lateral growth was saturated. The InGaP lateral width was about 250μm at the growth time of 6 hours. We report the result that optical microscope observation, CL and X-ray rocking curve measurements and reciprocal lattice space mapping were carried out to evaluate the crystal quality of the grown InGaP layers.

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