|
Crystal Research and Technology |
Cryst. Res. Technol. 41, 68 (2006) - Abstract -
DC conduction processes in nickel-dimethylglyoxime films
A. A. Dakhel
Dept. of Physics, College of Science, University of Bahrain, P.O. Box 32038, Bahrain
| Keywords | insulating films, nickel-dimethylglyoxime, dielectric phenomena, SCLC mechanism |
| PACS | 77.55.+f, 72.20.-I |
| DOI | 10.1002/crat.200410532 |
Thin nickel-dimethylglyoxime Ni(DMG)2 films of amorphous and crystalline structures were prepared by vacuum sublimation on glass and p-type Si substrates. The films were characterised by X-ray diffraction. The constructed Al/Ni(DMG)2/Si(p) MIS devices were characterised by the measurement of their capacitance as a function of gate voltage. The dc-electrical conduction of the Ni(DMG)2 films grown on silicon substrate were studied at room temperature and in a temperature range of 293 - 323 K. The dc current-voltage data of both amorphous and crystalline insulator follow the trap-charge-limited space-charge-limited conductivity mechanism with the characteristic trap energy Et of about 0.05 eV. The total concentration and the energy distribution of the traps were determined.
The full text of this paper in pdf-Format: 
If you have come directly to this page, click this symbol 
to go to the CRT homepage.