MOVPE growth of GaAs on Ge substrates by inserting a thin low temperature buffer layer by S. Scholz, J. Bauer, G. Leibiger, H. Herrnberger, D. Hirsch, and V. Gottschalch

Crystal Research and Technology

Cryst. Res. Technol. 41, 111 (2006) - Abstract -

MOVPE growth of GaAs on Ge substrates by inserting a thin low temperature buffer layer

S. Scholz, J. Bauer, G. Leibiger, H. Herrnberger*, D. Hirsch*, and V. Gottschalch

Institut für Anorganische Chemie, Universität Leipzig, Linéstraße 3, 04103 Leipzig, Germany
*Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04303 Leipzig, Germany

Keywords	MOVPE, GaAs on Ge, low temperature buffer layer
PACS	61.16.Ch, 61.10.Nz, 68.35.Ct, 81.05.Ea, 81.15.Gh
DOI	10.1002/crat.200510541

High quality GaAs layers have been grown by low pressure MOVPE on Ge(001) and Ge(001) 9° off oriented in [110] direction by using a thin low temperature (LT) GaAs layer. Investigations of the initial growth step were performed at different V/III ratios and temperatures. To show the good buffer layer quality solar cell structures were grown on off oriented n-Ge(001) and n-GaAs(001) substrates. The surface morphology was studied by atomic force microscopy which showed the step-flow growth mode on 1.2 μm thick GaAs/Ge structures. The crystalline qualities of this structures and the smooth surface morphology were investigated by double crystal X-ray diffraction (XRD) and atomic force microscopy (AFM).

For the full text of this paper in pdf-Format please follow the DOI link.

If you have come directly to this page, click this symbol

to go to the CRT homepage.