Growth and electrical properties of flash evaporated AgGaTe2 thin films by B. H. Patel and S. S. Patel

Crystal Research and Technology

Cryst. Res. Technol. 41, 117 (2006) - Abstract -

Growth and electrical properties of flash evaporated AgGaTe2 thin films

B. H. Patel and S. S. Patel*

Department of Electronics, S.P.University, V. V.Nagar-388 120, Gujarat, India
*University Science Instrumentation Centre (U.S.I.C.), S. P. University, V. V. Nagar-388 120, Gujarat, India

Keywords	EDAX, stoichiometry, chalcopyrite, amorphous, polycrystalline, substrate temperature
PACS	81.10.-h
DOI	10.1002/crat.200510542

Thin films have been prepared by flash evaporation technique of a stoichiometric bulk of AgGaTe₂ compound in vacuum and analysed using X-ray diffraction, transmission electron microscopy, selected area diffraction and energy dispersive analysis of X-rays. The effect of substrate temperature on the structural properties – grain size, film orientation, composition, and stoichiometry of the films have been studied. It was found that the polycrystalline, stoichiometric films of AgGaTe₂ can be grown in the substrate temperature range of 473K ≤ Ts ≤ 573K. The influence of substrate temperature (Ts) on the electrical characteristics- Resistivity, Hall Mobility, Carrier concentration of AgGaTe₂ thin films were studied. The electrical resistivity was found to decrease with increase in substrate temperature up to 573K and then increases. The variation of activation energy of AgGaTe₂ thin films were also investigated. The implications are discussed.

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