Investigation on defects in Lu2SiO5:Ce crystals grown by Czochralski method by Guohao Ren, Laishun Qin, Huanying Li, and Sheng Lu

Crystal Research and Technology

Cryst. Res. Technol. 41, 163 (2006) - Abstract -

Investigation on defects in Lu₂SiO₅:Ce crystals grown by Czochralski method

Guohao Ren, Laishun Qin, Huanying Li, and Sheng Lu

Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, P. R. China

Keywords	LSO crystals, un-stoichiometry, strips, scattering particles
PACS	78.55.Hx
DOI	10.1002/crat.200510549

Cerium-doped lutetium oxyorthosilicate crystals (Lu₂SiO₅:Ce) with dimension of D50x60mm were grown by Czochralski method from an inductively heated iridium crucible. The vaporized substance during growth was examined with XRD and proved to be SiO₂. The vertical and the screw strips existing on the surface of the boule were observed with optical microscope and tested with electron microprobe. They are confirmed to be iridium from the crucible and harmful to the crystal growth. The cleavage orientation of LSO was proved to be (110) and it is one of factors to cause crystal cracking. The scattering particles in LSO crystals are analyzed to be mainly composed of Lu₂O₃ inclusions. Two possible origins on these inclusions are proposed.

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