It is the first time that the idea of planar PIN structure ultraviolet (UV) detection has been demonstrated on SiC EPI wafers. By using this structure, the surface illuminated device has no efficiency-bandwidth trade-off problem, also can be easily integrated as an array device which can solve the low signal issue in normal edge illuminated device due to small device area with no sacrificial of high bandwidth. The performance of SiC PIN photodetectors is analyzed based on a serial of process parameters and device structures. The calculated results show the correlations of dark current, photocurrent, bandwidth (BW) with PIN structures and fabrication processes. Speed and optoelectronics performances were carefully considered for real implementations under theoretical conditions.

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