Evolution of the growth interface in liquid phase diffusion growth of bulk SiGe single crystals by M. Yildiz, S. Dost, and B. Lent

Crystal Research and Technology

Cryst. Res. Technol. 41, 211 (2006) - Abstract -

Evolution of the growth interface in liquid phase diffusion growth of bulk SiGe single crystals

M. Yildiz, S. Dost, and B. Lent*

Crystal Growth Laboratory, University of Victoria, Victoria BC, V8W 3P6 Canada
*DL Crystals Inc., McKenzie Avenue, R-Hut, Victoria BC, V8W 3W2 Canada

Keywords	liquid phase, diffusion, silicon, germanium, single crystals
PACS	81.10.Dn, 81.05.Hd
DOI	10.1002/crat.200510561

The article presents a study for the evolution of growth interface in crystal growth by Liquid Phase Diffusion (LPD). Specific LPD experiments were designed to grow compositionally graded, germanium-rich Si_xGe_1-x single crystals of 25 mm in diameter with various thicknesses. Measured interface shapes show the evolution of the growth interface. Silicon compositions were measured by the Energy Dispersive X-ray analysis (EDX) in the growth and radial directions. The study shows the feasibility of extracting the desired seeds of uniform composition from LPD grown crystals, for subsequent use in other epitaxial growth processes.

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