A novel growth method for ZnAl2O4 single crystals by K. Kumar, K. Ramamoorthy, R. Chandramohan, and K. Sankaranarayanan

Crystal Research and Technology

Cryst. Res. Technol. 41, 217 (2006) - Abstract -

A novel growth method for ZnAl₂O₄ single crystals

K. Kumar, K. Ramamoorthy, R. Chandramohan*, and K. Sankaranarayanan

Crystal Research Centre, Alagappa University, Karaikudi - 630 003, India
*Department of Physics, Sree Sevugan Annamalai College, Devakottai - 630302, India

Keywords	solution growth, compound semiconductor, single crystal, powder diffraction
PACS	81.10.Dn, 81.05.Hd, 61.10.Nz
DOI	10.1002/crat.200510562

ZnAl₂O₄ is a well-known wide band gap compound semiconductor (E_g2O₄ crystals having hexagonal facets are prepared from a single optimized bath. Structural and compositional properties of crystals were studied using Philips, Xpert - MPD: X-ray diffractometer and Philips, ESEM-TMP + EDAX. Thus technique was found to be a new low cost and advantageous method for growth of single crystals of ternary oxide a material. We hope that these data be helpful either as a scientific or technical basis in material processing.

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