Contribution to the Ti-Bi phase diagram by G. P. Vassilev

Crystal Research and Technology

Cryst. Res. Technol. 41, 349 (2006) - Abstract -

Contribution to the Ti-Bi phase diagram

G. P. Vassilev

University of Sofia, Faculty of Chemistry, Bulvd. J. Bourchier 1, 1164 Sofia, Bulgaria

Keywords	transition metals alloys, phase diagram, layers growth, intermediate phases, Ti-Bi oxides
PACS	61.66.Dk, 61.66.Fn, 68.55.Nq
DOI	10.1002/crat.200510586

The system Ti-Bi has been investigated by solid/liquid diffusion couples at 400, 500, 600 and 700°C. Indication that the growth rate of the diffusion layers at 500°C is linear has been found, with a growth constant of around 5x10^-11 m/s. The existence of the Ti₂Bi phase has been confirmed. Some formerly unknown binary phases (TiBi, Ti₂Bi₃, TiBi₂) have been observed. The phase TiBi is, probably, identical with Ti₈Bi₉ reported previously. All intermediate phases suffer air corrosion, but in various degrees. A tentative variant of the Ti-Bi phase diagram, including the newly found compounds, has been constructed.

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