Spectroscopic investigation of strain induced by compositional variation in bulk InxGa1-xAs crystal grown by MCZM method by M. S. Rahman, M. R. Islam, and M. Yamada

Crystal Research and Technology

Cryst. Res. Technol. 41, 358 (2006) - Abstract -

Spectroscopic investigation of strain induced by compositional variation in bulk In_xGa_1-xAs crystal grown by MCZM method

M. S. Rahman, M. R. Islam, and M. Yamada*

Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technoogy, Khulna-920300, Bangladesh
*Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Kyoto-606-8585, Japan

Keywords	bulk InGaAs, residual strain, MCZM method, Raman scattering, photoluminescence, energy dispersive X-ray
PACS	81.10.Fq, 78.30.Fs, 78.55.Cr
DOI	10.1002/crat.200510999

Raman scattering (RS), photoluminescence (PL) and energy dispersive X-ray (EDX) experiments have been carried out to investigate residual strain and hence to understand breakage issue in bulk In_xGa_1-xAs crystal grown by multi component zone melting (MCZM) method. It is found from a comparison that there is a large discrepancy among the RS, PL and EDX results due to the strain induced by compositional variation in the crystal. The strain induced changes in TO_GaAs and PL peak positions are found to be 4.04 cm^-1 and 0.097 eV, respectively, for the variation of composition from 0.06 to 0.29 from the seed-end to the tail-end of the crystal. By assuming a simple one-dimensional strain distribution, the strain value corresponding to 4.04 cm^-1/ 0.097 eV can be obtained of the order of 10^-2, which is large enough for understanding the breakage issue in the crystal investigated here.

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