Global simulation of a Czochralski furnace for silicon crystal growth against the assumed thermophysical properties by Y. R. Li, C. J. Yu, S. Y. Wu, L. Peng, and N. Imaishi

Crystal Research and Technology

Cryst. Res. Technol. 41, 636 (2006) - Abstract -

Global simulation of a Czochralski furnace for silicon crystal growth against the assumed thermophysical properties

Y. R. Li, C. J. Yu, S. Y. Wu, L. Peng, and N. Imaishi*

College of Power Engineering, Chongqing University, Chongqing 400044, China
*Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan

Keywords	computer simulation, finite element method, Czochralski method, silicon, thermophysical properties
PACS	81.10.Aj, 81.10.Fq, 47.15-x, 44.35.+c, 02.70.Dh
DOI	10.1002/crat.200510642

In order to understand the effects of the thermophysical properties of the melt on the transport phenomena in the Czochralski (Cz) furnace for the single crystal growth of silicon, a set of global analyses of momentum, heat and mass transfer in small Cz furnace (crucible diameter: 7.2 cm, crystal diameter: 3.5 cm, operated in a 10 Torr argon flow environment) was carried out using the finite-element method. The global analysis assumed a pseudosteady axisymmetric state with laminar flow. The results show that different thermophysical properties will bring different variations of the heater power, the deflection of the melt/crystal interface, the axial temperature gradient in the crystal on the center of the melt/crystal interface and the average oxygen concentration along the melt/crystal interface. The application of the axial magnetic field is insensitive to this effect. This analysis reveals the importance of the determination of the thermophysical property in numerical simulation.

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