Thermal and electrical properties of Tri Glycine Sulpho Phosphate (TGSP) and L-Asparagine doped TGSP crystals by M. Beatrice Margaret, R. Sankar, S. Kalainathan, R. Jayavel, and T. Irusan

Crystal Research and Technology

Cryst. Res. Technol. 41, 712 (2006) - Abstract -

Thermal and electrical properties of Tri Glycine Sulpho Phosphate (TGSP) and L-Asparagine doped TGSP crystals

M. Beatrice Margaret, R. Sankar*, S. Kalainathan**, R. Jayavel*, and T. Irusan***

Department of physics, Arignar Anna Government Arts College, Wallajapet – 632 513, India
*Crystal Growth Centre, Anna University, Chennai-600 025, India
**Department of physics, Vellore institute of Technology, vellore-14, India
***Department of physics, Presidency College, Chennai-5, India

Keywords	TGS, TGSP, L-Asparagine TGSP, TGA, DTA, dielectric properties
PACS	77.84.Fa, 77.22.-d, 78.20.C
DOI	10.1002/crat.200510653

Tri Glycinsulphate with partial substitution of phosphoric acid, namely Tri Glycine Sulpho Phosphate (TGSP) has been grown by slow cooling method. Habit modifications have been observed with change in the concentration of ortho phosphoric acid (H₃PO₄). Monoclinic structure of the grown crystals has been confirmed using X-ray diffraction analysis. TGSP crystals doped with L – Asparagine were also grown. The doping effect is qualitatively estimated using FTIR analysis. TGA, DTA studies and dielectric measurements were carried out for pure and L-Asparagine doped TGSP crystals to investigate the thermal and electrical properties of the crystals.

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