Variable-range hopping dc conduction in dysprosium oxide films grown on Si substrates by A. A. Dakhel

Crystal Research and Technology

Cryst. Res. Technol. 41, 800 (2006) - Abstract -

Variable-range hopping dc conduction in dysprosium oxide films grown on Si substrates

A. A. Dakhel

Dept. of Physics, College of Science, University of Bahrain, P.O. Box 32038, Bahrain Kingdom

Keywords	insulating films, dysprosium oxide, dielectric phenomena, Mott’s variable-range hopping mechanism
PACS	77.55.+ f, 72.20.-I
DOI	10.1002/crat.200510672

Thin dysprosium oxide films were prepared on p-Si substrates to form MOS structure. The oxide films were annealed at different conditions and their crystal structures were determined by X-ray diffraction. The dc electrical transport properties of the devices were studied in the temperature range (293-400 K). The current-temperature characteristics was analysed according to Mott’s variable-range hopping mechanism. The mechanism’s parameters were calculated and compared with the results obtained by X-ray diffraction. It was established that as the average grain size of air-annealed films increases, the disorder degree parameter decreases and the density of states at Fermi level increases, which leads to decrease the average hopping distance.

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