Excitation intensity and temperature-dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals by K. Goksen, N. M. Gasanly, and R. Turan

Crystal Research and Technology

Cryst. Res. Technol. 41, 822 (2006) - Abstract -

Excitation intensity and temperature-dependent photoluminescence and optical absorption in Tl₄Ga₃InSe₈ layered crystals

K. Goksen, N. M. Gasanly, and R. Turan

Physics Department, Middle East Technical University, 06531 Ankara, Turkey

Keywords	photoluminescence, X-ray diffraction, optical properties, semiconductors
PACS	78.55.-m, 61.10.Nz, 78.20.-e, 78.40.Fy
DOI	10.1002/crat.200510677

Photoluminescence (PL) spectra of Tl₄Ga₃InSe₈ layered crystals grown by Bridgman method have been studied in the wavelength region of 600-750 nm and in the temperature range of 17-68 K. A broad PL band centered at 652 nm (1.90 eV) was observed at T = 17 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.13 to 55.73 mW cm^-2 range. Radiative transitions from donor level located at 0.19 eV below the bottom of conduction band to shallow acceptor level located at 0.03 eV above the top of the valence band were suggested to be responsible for the observed PL band. From X-ray powder diffraction and optical absorption study, the parameters of monoclinic unit cell and the energy of indirect band gap were determined, respectively.

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