Crystal Research and Technology
Cryst. Res. Technol. 41, 880 (2006) - Abstract -

Formation of nanostructured tin oxide semiconductors by a simple thermal redox process

O. A. Fouad

Central Metallurgical Research and Development Institute (CMRDI), P.O. Box: 87 Helwan 11421, Cairo, Egypt

Keywords crystal growth, nanostrucured materials, semiconductors, tin oxide, XRD
PACS 61.10.Nz, 61.66.-Fn, 64.70.Hz, 86.60.-p, 81.07.-p
DOI 10.1002/crat.200510687

Nanostructured tin oxide have been synthesized in one-step process by a novel simple thermal reduction-oxidation route. The results show that tin oxide nanowires and nanorods could be synthesized via thermal treatment of a mixture of tin oxide and charcoal powder in air at 1000-1250°C. At a relatively low temperature, 1000°C, and time, 30 min, the tin oxide structure was found to be a bundle of dense nanorods. By increasing the reaction time to 180 min at the same temperature (1000°C), the bundles separated to form liberated individuals nanowires with almost round cross sectional view. With the increase of temperature and time, the morphology of tin oxide nanostructures varied from nanowires to well-defined tetragonal rods.





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