Optical band gap of zinc nitride films prepared by reactive rf magnetron sputtering by Wei Du, Fujian Zong, Honglei Ma, Jin Ma, Min Zhang, Xianjin Feng, Hua Li, Zhigang Zhang, and Peng Zhao

Crystal Research and Technology

Cryst. Res. Technol. 41, 889 (2006) - Abstract -

Optical band gap of zinc nitride films prepared by reactive rf magnetron sputtering

Wei Du, Fujian Zong, Honglei Ma, Jin Ma, Min Zhang, Xianjin Feng, Hua Li, Zhigang Zhang, and Peng Zhao

School of Physics and Microelectronics, Shandong University, Jinan 250100, China

Keywords	optical band gap, zinc nitride films, reactive rf magnetron sputtering, absorption coefficient
PACS	61.10.Nz, 71.35.Cc, 78.20.-e, 78.40.-q, 81.15.Cd
DOI	10.1002/crat.200510689

Polycrystalline Zn₃N₂ films are prepared on Si and quartz glass substrates by RF magnetron sputtering at room temperature. The structural and optical properties are studied by X-ray diffraction and double beam spectrophotometer, respectively. X-ray diffraction indicates that the Zn₃N₂ films deposited on Si and quartz glass substrates both have a preferred orientation in (321) and (442), also are cubic in structure with the lattice constant a=0.9847 and 0.9783 nm, respectively. The absorption coefficients as well as the film thickness are calculated from the transmission spectra, and their dependence on photon energy is examined to determine the optical band gap. Zn₃N₂ is determined to be an indirect-gap semiconductor with the band gap of 2.11(2) eV.

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