Optical properties of Al-doped ZnO thin films deposited by two different sputtering methods by Keunbin Yim and Chongmu Lee

Crystal Research and Technology

Cryst. Res. Technol. 41, 1198 (2006) - Abstract -

Optical properties of Al-doped ZnO thin films deposited by two different sputtering methods

Keunbin Yim and Chongmu Lee

Department of Materials Science and Engineering, Inha University, 253 Yonghyeon-dong, Incheon 402-751, Korea

Keywords	Al-doped ZnO (AZO), R.F. magnetron sputtering, R.F. power, transparent conducting oxide (TCO), transmittance
PACS	81.15.-z, 73.61.Ga, 78.66.+m
DOI	10.1002/crat.200610749

Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of an AZO target. The dependence of the photoluminescence (PL) and transmittance properties of the AZO films deposited by cosputtering and sputtering on the AZO/ZnO target power ratio, R and the O2/Ar flow ratio, r were investigated, respectively. Only a deep level emission peak appears in the PL spectra of cosputtered AZO films whereas both UV emission and deep level emission peaks are observed in the PL spectra of sputtered AZO films. The absorption edges in the transmittance spectra of the AZO films shift to the lower wavelength region as R and r increase. Also effects of crystallinity, surface roughness, PL on the transmittance of the AZO films were explained using the X-ray diffraction (XRD), atomic force microscopy (AFM), and PL analysis results.

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