Preparation of GaN crystals by heating a Li3N-added Ga melt in Na vapor and their photoluminescence by Takahiro Yamada, Hisanori Yamane, Takaaki Ohta, Takenari Goto, and Takafumi Yao

Crystal Research and Technology

Cryst. Res. Technol. 42, 13 (2007) - Abstract -

Preparation of GaN crystals by heating a Li₃N-added Ga melt in Na vapor and their photoluminescence

Takahiro Yamada, Hisanori Yamane, Takaaki Ohta*, Takenari Goto*, and Takafumi Yao*

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
*Center for Interdisciplinary Research, Tohoku University, 6-3 Aramaki, Aoba-ku, Sendai 980-8578, Japan

Keywords	GaN crystals, crystal growth, Na flux method, photoluminescence
PACS	81.05.Ea, 81.10.Dn, 71.55.Eq
DOI	10.1002/crat.200610762

GaN crystals were prepared by heating a Ga melt with 1 at% Li₃N against Ga at 750°C in Na vapor under N₂ pressures of 0.4–1.0 MPa. The GaN crystals grown at 1.0 MPa of N₂ were colorless and transparent prismatic, having a size of approximately 0.7 mm in length. A secondary ion mass spectrometry (SIMS) showed the contaminant of lithium in the obtained crystals. A large broad yellow band emission peak of 2.28 eV was observed at room temperature in the photoluminescence spectrum in addition to the near band emission peak of GaN at 3.39 eV and a small broad satellite emission at 3.24 eV.

The full text of this paper in pdf-Format:

If you have come directly to this page, click this symbol

to go to the CRT homepage.