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Crystal Research and Technology |
Cryst. Res. Technol. 42, 39 (2007) - Abstract -
Growth and characterization of sulphamic acid single crystals grown by Sanakaranarayanan-Ramasamy (SR) method
M. Lenin, N. Balamurugan, and P. Ramasamy
Crystal Growth Centre, Anna University, Chennai-25, India
| Keywords | solution growth, X-ray diffraction, IR and Raman spectrum, dielectric constant |
| PACS | 81.10.Dn, 61.10.Nz, 78.30.Aj |
| DOI | 10.1002/crat.200610767 |
By directional solidification, single crystal of Sulphamic acid (SA) was successfully grown from aqueous solution by Sankaranarayanan-Ramasamy (SR) method. A vertically designed L-bend was used to avoid the effect due to spurious nucleation. A vertical bottom-seeded ampoule was used for the growth of single crystal. A seed crystal was mounted at the bottom of the ampoule. Sulphamic acid crystals of up to 40 mm in diameter and 60 mm in length have been grown with a growth up to 10 mm per day. The grown sulphamic acid single crystal was characterized using X-ray powder diffraction analysis, Raman, FTIR, and optical transmission studies. The dielectric behaviour was measured in the frequency range of 1 kHz - 10 MHz for the temperature ranges from 30°C to 170°C. The sulphamic acid single crystal was also grown by conventional method.
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