Crystal Research and Technology
Cryst. Res. Technol. 42, 227 (2007) - Abstract -

Properties of AgGa1-xInxSe2 single crystals grown by Bridgman method

Y. Huang, B. J. Zhao , S. F. Zhu, W. L. Zhu, C. F. Xu, S .Q. Wan, and Z. Y. He

Department of Materials Science, Sichuan University, Chengdu 610064, P. R. China

Keywords infrared nonlinear optical crystal, Bridgman method, X-ray diffraction, DSC analysis, UV-spectrum, IR-spectrum, AgGa1-xInxSe2
PACS 81.10.Fq, 81.20.-n, 42.70.Nq
DOI 10.1002/crat.200610804

High-pure and single-phase AgGa1-xInxSe2 (x=0.2) polycrystalline was synthesized by the mechanical and temperature oscillation method. Adopting the modified Bridgman method an integral AgGa1-xInxSe2 single crystal with diameter of 14 mm and length of 35 mm has been obtained at the rate of 6 mm/day. It was found that there is a new cleavage face which was (101), and observed the four order X-ray spectrum of the {101} faces. By the method of DSC analysis the melting and freezing points of the AgGa1-xInxSe2 (x=0.2) single crystal were about 828°C and 790°C. The transmission spectra of the AgGa1-xInxSe2 (x=0.2) sample of 5x6x2 mm3 were obtained by means of UV and IR spectrophotometer. The limiting frequency was 774.316nm and the band gap was 1.6eV. It can be found in the infrared spectrum that the infrared transmission was above 60% from 4000cm-1 to 600cm-1. The value of α in 5.3μm and 10.6μm were 0.022cm-1 and 0.1cm-1 respectively. All results showed that the crystal was of good quality.




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