Photoacoustic studies on optical and thermal properties of p-type and n-type nanostructured porous silicon for (100) and (111) orientations by R. Srinivasan, M. Jayachandran, and K. Ramachandran

Crystal Research and Technology

Cryst. Res. Technol. 42, 266 (2007) - Abstract -

Photoacoustic studies on optical and thermal properties of p-type and n-type nanostructured porous silicon for (100) and (111) orientations

R. Srinivasan, M. Jayachandran*, and K. Ramachandran**

Department of Physics, Thiagarajar College, Madurai - 625 009, India
*ECMS Division, Central Electrochemical Research Institute, Karaikudi – 630 006, India
**School of Physics, Madurai Kamaraj University, Madurai – 625 021, India

Keywords	porous silicon, thermal conductivity, photoacoustic spectroscopy, phonon confinement
PACS	81.70.Cv, 78.55.Mb
DOI	10.1002/crat.200610811

Nanostructured p-type and n-type porous silicon samples were prepared for (100) and (111) orientations and a systematic study is carried out on the effects of orientations, dopant type (boron and phosphorous), current density (20 and 30mA/cm²) and etching time on the formation, optical and thermal properties by photoacoustic spectroscopy.

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