Growth of Nd:Sr3Ga2Ge4O14 crystals by a modified Bridgman method by Anhua Wu, Jiaxuan Ding, Jiayue Xu, and Xinhua Li

Crystal Research and Technology

Cryst. Res. Technol. 42, 451 (2007) - Abstract -

Growth of Nd:Sr₃Ga₂Ge₄O₁₄ crystals by a modified Bridgman method

Anhua Wu, Jiaxuan Ding, Jiayue Xu, and Xinhua Li

Shanghai Institute of Ceramics, Chinese Academy of Science, 1295 Dingxi Road, Shanghai 200050, People’s Republic of China

Keywords	laser crystal, crystal growth, distribution coefficient
PACS	42.70.Hj, 81.10.Fq
DOI	10.1002/crat.200610846

Bridgman growth of Nd:SGG (Sr₃Ga₂Ge₄O₁₄) crystals has been investigated for the first time. Pt crucible of 25mm diameter x 250mm with a seed well of 10mm diameter x 80 mm is used, and seed is SGG crystal of 10mm diameter x 50mm grown by Bridgman method in advance. The growth parameters are optimized as the furnace temperature is set to 1450~1500°C, temperature gradient in the crystal-melt interface is less than 25 K/cm and growth rate is less than 0.5mm/h. The Nd:SGG crystals with 25mm in diameter and 60mm in length are grown successfully from 1.5 to 8at% Nd³⁺ doped stoichiometric Sr₃Ga₂Ge₄O₁₄ melt. The distribution coefficient and concentration of Nd³⁺ in Nd:SGG crystals are obviously higher than those of Nd:YAG crystal.

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