Crystal Research and Technology
Cryst. Res. Technol. 42, 641 (2007) - Abstract -

Silicon crystal fibers: difficulties and progress

M. Alshourbagy, A. Toncelli, M. Tonelli, and F. Marchetti*

Istituto Nazionale di Fisica Nucleare (INFN) and Dipartimento di Fisica dell’Università di Pisa, Largo Pontecorvo 3, 56127 Pisa, Italy
*Dipartimento di Chimica e Chimica Industriale, Università di Pisa, Risorgimento 35, 56126 Pisa, Italy

Keywords thermal noise, suspension, crystalline fibers, micro-pulling-down, silicon
PACS 81.10.-h, 65.40.De, 04.80.Nn
DOI 10.1002/crat.200610881

In this work difficulties and the progress in growing Silicon fibers by μ-PD technique have been reported. Some main instability growth problems have been solved. Smooth temperature gradient is obtained for longer distance in and under the hot zone part by making an effective change in our hot zone. Also we obtained temperature stabilization as good as 0.2 K. The level of impurities was minimized by using etching and baking processes.




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