Growth and crystal structure of the layered compound TlGaSe2 by G. E. Delgado, A. J. Mora, F. V. Pérez, and J. González

Crystal Research and Technology

Cryst. Res. Technol. 42, 663 (2007) - Abstract -

Growth and crystal structure of the layered compound TlGaSe₂

G. E. Delgado, A. J. Mora, F. V. Pérez*, and J. González**

Laboratorio de Cristalografía, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela
*Departamento de Física, Facultad de Ciencias, Universidad del Zulia, Venezuela
**Centro de Estudios de Semiconductores, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela

Keywords	semiconductors, layered compounds, crystal structure, X-ray diffraction
PACS	61.10.Nz, 61.50.Nw, 61.66.Fn
DOI	10.1002/crat.200610885

The semiconducting compound TlGaSe₂ was grown by solid state reaction technique. The crystal structure of this material was confirmed by single-crystal X-ray diffraction. TlGaSe₂ crystallizes in the monoclinic system with space group C2/c (No. 15), Z = 16 and unit cell parameters a = 10.779(2) Å, b = 10.776(1) Å, c = 15.663(5) Å, β = 99.993(6)°. The structural refinement converged to R(F) = 0.0719, R(F²) = 0.0652 and S = 1.17. The structure consists of a three-dimensional arrangement of distorted TlSe₈ and GaSe₄ polyhedrons.

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