Effect of crystal thickness of separate confinement heterostructure layers on 1.55-骻 loss-coupled dfb laser characteristics by Jae-Ho Han and Sung-Woong Park

Crystal Research and Technology

Cryst. Res. Technol. 42, 707 (2007) - Abstract -

Effect of crystal thickness of separate confinement heterostructure layers on 1.55-骻 loss-coupled dfb laser characteristics

Jae-Ho Han and Sung-Woong Park*

Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 N. Charles St. Baltimore, MD 21218, USA
*Optical Communications Research Center, Electronics and Telecommunications Research Institute (ETRI), 1110-6 Oryong-dong, Buk-gu, Gwangju, 500-480, Republic of Korea

Keywords	semiconductor lasers, distributed feedback lasers, quantum well lasers, heterostructure
PACS	42.55.Px, 85.60.Bt, 87.64.Ee, 73.40.Kp
DOI	10.1002/crat.200610892

We investigated the effect of the crystal thickness of the separate confinement heterostructure (SCH) guiding layers on the characteristics (threshold current, quantum efficiency) of 1550-nm loss-coupled Distributed Feedback laser diode fabricated with a simple step growth having an automatically buried absorptive grating InAsP layer. By increasing the thickness of SCH crystal layers from 40-nm to 80-nm in both below and above the multi-quantum well region, we could achieve lower threshold currents both in 25蚓 and 85蚓 with increased ratio of quantum efficiencies between two temperatures.

If you have come directly to this page, click this symbol

to go to the CRT homepage.

The full text of this paper in pdf-Format is available at Wiley Interscience.