Temperature field design, process analysis and control of SAPMAC method for the growth of large size sapphire crystals by C. H. Xu, M. F. Zhang, S. H. Meng, J. C. Han, G. G. Wang, and H. B. Zuo

Crystal Research and Technology

Cryst. Res. Technol. 42, 751 (2007) - Abstract -

Temperature field design, process analysis and control of SAPMAC method for the growth of large size sapphire crystals

C. H. Xu, M. F. Zhang, S. H. Meng, J. C. Han, G. G. Wang, and H. B. Zuo

Center for Composite Materials, Harbin Institute of Technology, Harbin, 150001, P. R. China

Keywords	sapphire, SAPMAC method, temperature field design, process optimization
PACS	61.72.Qq, 81.10.-h, 81.10.Fq
DOI	10.1002/crat.200710902

In this paper, the relationship between quality of sapphire crystal and growing parameters of SAPMAC (Sapphire growth technique with micro-pulling and shoulder-expanding at cooled center) method was discussed. Optimized temperature distribution and technique control were proposed by theoretical analysis, numerical simulation computation and experimental validation to obtain large size sapphire crystals. For a-axis crystallized direction, with 1.0-5.0mm/h growth velocity and 10-30K/h temperature decreasing speed, large sapphire single crystal (240mm×210mm, 27.5kg) having high optical quality was successfully grown. The absorption spectrum of standard samples was measured as well.

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