Crystal Research and Technology
Cryst. Res. Technol. 42, 1054 (2007) - Abstract -

Anodic oxide films on silicon carbide

S. K. Lilov

Department of Semiconductor Physics, Faculty of Physics,University of Sofia, 5 J. Bourchier Blvd., 1164 Sofia, Bulgaria

Keywords growth, anodic oxidation, thin films, silicon carbide
PACS 81.05.Hd, 81.15.-z, 81.65.-b, 81.65.Mq, 82.45.Cc, 82.45.Mp
DOI 10.1002/crat.200710977

Anodic oxide films were grown on SiC using various electrolytes. The obtained oxide films were compared and some of their electrophysical properties were investigated. Anodic oxidation of SiC was shown to be useful for precise removal of layers as well as for identification of the polar faces of SiC crystals.




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