Crystal Research and Technology
Cryst. Res. Technol. 42, 1082 (2007) - Abstract -

Growth and photoluminescence properties of CdS solid solution semiconductor

Fuyi Chen and Wanqi Jie

State Key Laboratory of Solidification Processing, Northwestern Polytechnic University, Xian, 710072, P. R. China

Keywords photoluminescence, CdS solid solution, luminescence center
PACS 71.20.Nr
DOI 10.1002/crat.200710955

Photoluminescence (PL) emitted from Cd1-xZnxS and CdS1-ySey solid solution semiconductor was significantly stronger than PL from the pure CdS and CdSe semiconductor. The samples were prepared using an improved Se-S-Na2S flux route. Photoluminescence in Cd1-xZnxS crystal was brightly yellow at room temperature under UV radiation. The phase and composition of the solid solution was measured by the XRD and was confirmed by UV-NIS spectrum as x of 0.3 and y of 0.2. The enhanced photoluminescence was presumably due to the introduction of extra defect (vacancies) by solid solution action and consequently the increasing of luminescence center concentration.




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