Crystal Research and Technology
Cryst. Res. Technol. 42, 1132 (2007) - Abstract -

Bias field induced impedance relaxation of TlGaSe2 semiconducting layered crystal at room temperature

M. Okutan, F. Azak*, P. Sahin*, M. Cavdarli*, Z. Erdem*, and E. Sentürk*

Department of Physics, Gebze Institute of Technology, Gebze, 41400, Kocaeli, Turkey
*Department of Physics, Sakarya University, Sakarya, 54100, Sakarya, Turkey

Keywords impedance, layered crystal, relaxation
PACS 75.50.Kj
DOI 10.1002/crat.200710964

Complex Impedance Spectroscopy has been employed for the study of absorption kinetics at TlGaSe2 layered crystal under Bias voltage at room temperature. Two relaxations mechanisms have been observed. The crystal has “slow” and “fast” relaxation mechanisms in low and high frequency region, respectively. The complex impedance spectra were fitted by the superposition of two Cole-Cole types of relaxations. The fast relaxation in the higher frequency region may be due to dipolar relaxation and the slow relaxation in the low frequency region may be due to Maxwell-Wagner type relaxation.




The full text of this paper in pdf-Format:

If you have come directly to this page, click this symbol to go to the CRT homepage.