Characterization of in-plane structures of vapor deposited thin-films of distyryl-oligothiophenes by grazing incidence x-ray diffractometry by Noriyuki Yoshimoto, Keijyu Aosawa, Toshinori Taniswa, Kazuhiko Omote, J. Ackermann, C. Videlot

Crystal Research and Technology

Cryst. Res. Technol. 42, 1228 (2007) - Abstract -

Characterization of in-plane structures of vapor deposited thin-films of distyryl-oligothiophenes by grazing incidence x-ray diffractometry

Noriyuki Yoshimoto, Keijyu Aosawa, Toshinori Taniswa, Kazuhiko Omote*, J. Ackermann**, C. Videlot - Ackermann**, H. Brisset**, and F. Fages**

Graduate School of Engineering, Iwate University, Ueda Morioka 020-8551, Japan
*X-Ray Research Laboratory, Rigaku Corporation, 3-9-12 Mtsubara-cho Akishima, Tokyo 196-8666, Japan
**Laboratoire des Matériaux Moléculaires et des Biomatériaux, GCOM2 UMR CNRS 6114 Faculté des Sciences de Luminy, Case 901, F-13288, Marseille cedex 09, France

Keywords	x-ray diffraction, vapor phase epitaxy, organic compounds, semiconducting materials
PACS	81.15.Kk, 61.10.Nz
DOI	10.1002/crat.200711010

The in-plane structures of vapor deposited ultrathin films of distyryl-oligothiophenes (DS-2T) on SiO₂ substrate were characterized by grazing incidence x-ray diffractometry (GIXD). Two polymorphs, low-temperature and high-temperature phases, were identified, and the two dimensional unit cell parameters were determined for each polymorph. The polymorphism depends on substrate temperature and film thickness.

If you have come directly to this page, click this symbol

to go to the CRT homepage.

The full text of this paper in pdf-Format is available at Wiley Interscience.